| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：182.41 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：911.36 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor ? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications 文件：188.81 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：182.41 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：911.36 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation 文件：1.01255 Mbytes 頁(yè)數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK(TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi 文件：276.09 Kbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dv/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Material categorization: for definitions of compliance please see www.vishay.com/doc 文件：318.59 Kbytes 頁(yè)數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dv/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Material categorization: for definitions of compliance please see www.vishay.com/doc 文件：318.59 Kbytes 頁(yè)數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK(TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi 文件：276.09 Kbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- OPN：
IRL540NPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
44 m?
- RDS (on) @4.5V max：
63 m?
- ID @25°C max：
36 A
- QG typ @4.5V：
49.3 nC
- Polarity：
N
- VGS(th) min：
1 V
- VGS(th) max：
2 V
- VGS(th)：
1.5 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
05+ |
原廠原裝 |
4254 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR |
24+ |
TO-220 |
1500 |
詢價(jià) | |||
IR |
24+ |
原廠封裝 |
660 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
JINGDAO/晶導(dǎo)微 |
23+ |
SMA(DO-214AC) |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
VISHAY |
25+ |
TO-220 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件! |
詢價(jià) | ||
IR |
25+ |
TO-220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
sil |
25+ |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) | |||
Vishay |
26+ |
WQFN16 |
86720 |
全新原裝正品價(jià)格最實(shí)惠 假一賠百 |
詢價(jià) |
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