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首頁(yè) >IRL220>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
IRL220	文件：154.1 Kbytes Page：5 Pages	N-Channel Power Mosfets 文件：154.1 Kbytes 頁(yè)數(shù)：5 Pages	ARTSCHIP	ARTSCHIP
IRL2203	文件：221.17 Kbytes Page：8 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：221.17 Kbytes 頁(yè)數(shù)：8 Pages	IRF	IRF
IRL2203N	文件：221.17 Kbytes Page：8 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：221.17 Kbytes 頁(yè)數(shù)：8 Pages	IRF	IRF
IRL2203NL	文件：132.36 Kbytes Page：10 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：132.36 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL2203NLPBF	文件：231.35 Kbytes Page：11 Pages	HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：231.35 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF
IRL2203NLPBF	文件：295.79 Kbytes Page：10 Pages	Advanced Process Technology Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：295.79 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL2203NPBF	文件：183.07 Kbytes Page：8 Pages	HEXFET? Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：183.07 Kbytes 頁(yè)數(shù)：8 Pages	IRF	IRF
IRL2203NS	文件：132.36 Kbytes Page：10 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：132.36 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL2203NSPBF	文件：231.35 Kbytes Page：11 Pages	HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：231.35 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF
IRL2203NSPBF	文件：295.79 Kbytes Page：10 Pages	Advanced Process Technology Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：295.79 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF

技術(shù)參數(shù)

Package?：
TO-220
VDS?max：
30.0V
RDS (on)(@10V)?max：
7.0m?
RDS (on)?max：
7.0m?
RDS (on)(@4.5V)?max：
10.0m?
Polarity?：
N
ID (@ TC=100°C)?max：
71.0A
ID ?max：
71.0A
ID (@ TC=25°C)?max：
100.0A
Ptot?max：
130.0W
QG?：
40.0nC?
Mounting?：
THT
RthJC?max：
1.2K/W
Tj?max：
175.0°C
VGS?max：
16.0V
Qgd?：
22.0nC?

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市粵科源興科技有限公司	IRL2203N	IR	13+	TO-220	7258	原裝分銷	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	IRL2203	IR	05+	TO-220	5000	全新原裝絕對(duì)有貨	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRL2203NLPBF	IR	24+	TO-262-3	113		詢價(jià)
深圳市勤思達(dá)科技有限公司	IRL2203S	IR	12+	TO-263	15000	全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。	詢價(jià)
深圳市弘為電子有限公司	IRL2203N	IR	24+	原廠封裝	3500	原裝現(xiàn)貨假一罰十	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	IRL2203NSTRR	IR	23+	TO252	5000	原裝正品,假一罰十	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	IRL2203NS	ir	24+	N/A	6980	原裝現(xiàn)貨,可開(kāi)13%稅票	詢價(jià)
深圳市卓越微芯電子有限公司	IRL2203N	IR	25+	TO-220	10	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市利加科技有限公司	IRL2203NPBF	IR	16+	TO-220	10000	全新原裝現(xiàn)貨	詢價(jià)
深圳市凌旭科技有限公司	IRL2203NS	IR	2016+	TO-263	3000	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢價(jià)

更多IRL220供應(yīng)商更新時(shí)間2026-1-22 9:01:00

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