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          首頁 >IRGBC40>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRGBC40

          INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A)

          Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

          文件:237.32 Kbytes 頁數(shù):6 Pages

          IRF

          IRGBC40

          INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

          Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

          文件:248.18 Kbytes 頁數(shù):6 Pages

          IRF

          IRGBC40F

          INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

          Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

          文件:248.18 Kbytes 頁數(shù):6 Pages

          IRF

          IRGBC40K

          INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A)

          Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

          文件:237.32 Kbytes 頁數(shù):6 Pages

          IRF

          IRGBC40M

          INSULATED GATE BIPOLAR TRANSISTOR

          Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

          文件:45.25 Kbytes 頁數(shù):2 Pages

          IRF

          IRGBC40M-S

          INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)

          Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

          文件:88.62 Kbytes 頁數(shù):2 Pages

          IRF

          IRGBC40S

          INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A)

          Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

          文件:249.57 Kbytes 頁數(shù):6 Pages

          IRF

          IRGBC40U

          INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)

          Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

          文件:244 Kbytes 頁數(shù):6 Pages

          IRF

          IRGBC40F

          Fit Rate / Equivalent Device Hours

          文件:98.39 Kbytes 頁數(shù):35 Pages

          IRF

          IRGBC40K

          Fit Rate / Equivalent Device Hours

          文件:98.39 Kbytes 頁數(shù):35 Pages

          IRF

          詳細(xì)參數(shù)

          • 型號(hào):

            IRGBC40

          • 制造商:

            IRF

          • 制造商全稱:

            International Rectifier

          • 功能描述:

            INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A)

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          IR
          22+
          TO
          6000
          十年配單,只做原裝
          詢價(jià)
          IR
          23+
          TO
          8000
          只做原裝現(xiàn)貨
          詢價(jià)
          IR
          23+
          TO
          7000
          詢價(jià)
          IR
          25+
          TO
          12300
          獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
          詢價(jià)
          IR
          16+
          TO-220
          10000
          全新原裝現(xiàn)貨
          詢價(jià)
          INTERNATIONA
          05+
          原廠原裝
          4436
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          IRC
          40
          全新原裝 貨期兩周
          詢價(jià)
          INFINEON
          25+
          TO-220
          3000
          就找我吧!--邀您體驗(yàn)愉快問購元件!
          詢價(jià)
          Infineon
          22+
          NA
          2118
          加我QQ或微信咨詢更多詳細(xì)信息,
          詢價(jià)
          IR
          23+
          TO220
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          更多IRGBC40供應(yīng)商 更新時(shí)間2026-1-20 10:04:00
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