| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRG4PH30 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features ? High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V , TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? Latest generation design provides tighter parameter distribution and higher efficiency than previous g 文件:161.67 Kbytes 頁數(shù):8 Pages | IRF | IRF | |
IRG4PH30 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features ? High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V , TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? Tighter parameter distribution and higher efficiency than previous generations ? IGBT co-packaged with HE 文件:212.54 Kbytes 頁數(shù):10 Pages | IRF | IRF | |
IRG4PH30 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) | Infineon 英飛凌 | Infineon | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features ? High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V , TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? Latest generation design provides tighter parameter distribution and higher efficiency than previous g 文件:161.67 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features ? High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V , TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? Tighter parameter distribution and higher efficiency than previous generations ? IGBT co-packaged with HE 文件:212.54 Kbytes 頁數(shù):10 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ? High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V , TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? Tighter parameter distribution and higher efficiency than previous generations ? IGBT co-packaged with HE 文件:468.82 Kbytes 頁數(shù):10 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT Features ? High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V , TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? Latest generation design provides tighter parameter distribution and higher efficiency than previous g 文件:345.91 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件:477.95 Kbytes 頁數(shù):11 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件:477.95 Kbytes 頁數(shù):11 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件:354.86 Kbytes 頁數(shù):9 Pages | IRF | IRF |
技術(shù)參數(shù)
- Technology?:
IGBT Gen 4
- Switching Frequency?min?max:
8.0kHz?30.0kHz
- Package?:
TO-247
- Voltage Class?max:
1200.0V
- IC(@100°)?max:
10.0A
- IC(@25°)?max:
20.0A
- ICpuls?max:
40.0A
- Ptot?max:
100.0W
- VCE(sat)?:
3.1V?
- Eon?:
0.64mJ?
- Eoff(Hard Switching)?:
0.92mJ?
- td(on)?:
27.0ns?
- tr?:
26.0ns?
- td(off)?:
310.0ns?
- tf?:
330.0ns?
- QGate?:
94.0nC?
- Ets??(max):
1.56mJ?(2.4mJ)
- Switching Frequency?:
Gen 4 8-30 kHz
- VCE?max:
1200.0V
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
TO |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO |
7000 |
詢價 | |||
IR |
24+ |
TO-247AC |
8866 |
詢價 | |||
DISCRETE |
25 |
IR |
3500 |
詢價 | |||
IR |
2015+ |
TO-247AC |
12500 |
全新原裝,現(xiàn)貨庫存長期供應 |
詢價 | ||
IR |
2015+ |
TO-247 |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
16+ |
TO-3P |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
05+ |
原廠原裝 |
501 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
IR |
17+ |
TO-247 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 |
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