INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

Features ? High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V , TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? Tighter parameter distribution and higher efficiency than previous generations ? IGBT co-packaged with HE

文件：212.54 Kbytes 頁(yè)數(shù)：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ? High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V , TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? Tighter parameter distribution and higher efficiency than previous generations ? IGBT co-packaged with HE

文件：468.82 Kbytes 頁(yè)數(shù)：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：477.95 Kbytes 頁(yè)數(shù)：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：477.95 Kbytes 頁(yè)數(shù)：11 Pages

IRF

1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package

1200V IGBT 與超快4-20 kHz 軟恢復(fù)二極管聯(lián)合封裝到 TO-247AC 封裝中。 ? 對(duì)電機(jī)控制的高短路額定值進(jìn)行了優(yōu)化，tsc =10μs, VCC = 720V , TJ = 125°C, VGE = 15V\n? 低通態(tài)損耗與高開關(guān)速度相結(jié)合\n? 參數(shù)分布更緊湊，效率更高\(yùn)n? 與 HEXFREDTM超快、超軟恢復(fù)反并聯(lián)二極管聯(lián)合封裝的 IGBT\n? 無(wú)鉛\n\n優(yōu)勢(shì):\n? IGBT 提供可行的高功率密度電機(jī)控制\n? HEXFREDTM 二極管經(jīng)過(guò)與 IGBT 并用優(yōu)化，將噪聲、EMI 和開關(guān)損耗降低;

Infineon

英飛凌

Package：TO-247-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 20A 100W TO247AC

INFINEON

英飛凌

Package：TO-247-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 20A 100W TO247AC

INFINEON

英飛凌