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    首頁 >IRG4BC30>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    IRG4BC30FD-S

    INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

    Features ? Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. ? IGBT co-packaged with Hyperfast FRED diodes for ultra l

    文件:1.25649 Mbytes 頁數(shù):11 Pages

    IRF

    IRG4BC30FD-SPBF

    INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

    Features ? Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter . parameter distribution and higher efficiency than Generation 3. ? IGBT co-packaged with Hyperfast FRED diodes for ultra

    文件:1.17757 Mbytes 頁數(shù):12 Pages

    IRF

    IRG4BC30FPBF

    Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR

    Features ? Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? Industry standard TO-220AB package ? Lead-Free Benefits ? Generatio

    文件:218.21 Kbytes 頁數(shù):8 Pages

    IRF

    IRG4BC30K

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

    Features ? High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? Latest generation design provides tighter parameter distribution and higher efficiency than previous

    文件:137.95 Kbytes 頁數(shù):8 Pages

    IRF

    IRG4BC30KD

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

    Short Circuit Rated UltraFast IGBT Features ? High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? tighter parameter distribution and higher efficiency than previous generations

    文件:196.13 Kbytes 頁數(shù):10 Pages

    IRF

    IRG4BC30KDPBF

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT

    Features ? High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? tighter parameter distribution and higher efficiency than previous generations ? IGBT co-packag

    文件:321.45 Kbytes 頁數(shù):11 Pages

    IRF

    IRG4BC30KDS

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

    Features ? High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? tighter parameter distribution and higher efficiency than previous generations ? IGBT co-packaged with HEXFREDTM ul

    文件:225.23 Kbytes 頁數(shù):10 Pages

    IRF

    IRG4BC30KD-S

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

    Features ? High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? tighter parameter distribution and higher efficiency than previous generations ? IGBT co-packaged with HEXFREDTM ul

    文件:225.23 Kbytes 頁數(shù):10 Pages

    IRF

    IRG4BC30KD-SPBF

    INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

    Features ? High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? tighter parameter distribution and higher efficiency than previous generations ? IGBT co-packaged with HEXFREDTM ul

    文件:350.48 Kbytes 頁數(shù):10 Pages

    IRF

    IRG4BC30KD-STRR

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

    Features ? High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? tighter parameter distribution and higher efficiency than previous generations ? IGBT co-packaged with HEXFREDTM ul

    文件:225.23 Kbytes 頁數(shù):10 Pages

    IRF

    技術(shù)參數(shù)

    • Technology?:

      IGBT Gen 4

    • Switching Frequency?min?max:

      8.0kHz?30.0kHz

    • Package?:

      TO-220

    • Voltage Class?max:

      600.0V

    • IC(@100°)?max:

      17.0A

    • IC(@25°)?max:

      31.0A

    • ICpuls?max:

      124.0A

    • Ptot?max:

      100.0W

    • VCE(sat)?:

      1.59V?

    • Eon?:

      0.23mJ?

    • Eoff(Hard Switching)?:

      1.18mJ?

    • td(on)?:

      20.0ns?

    • tr?:

      16.0ns?

    • td(off)?:

      290.0ns?

    • tf?:

      350.0ns?

    • QGate?:

      67.0nC?

    • Ets??(max):

      1.41mJ?(2.0mJ)

    • Switching Frequency?:

      Gen 4 8-30 kHz

    • VCE?max:

      600.0V

    供應(yīng)商型號品牌批號封裝庫存備注價格
    IR
    15+
    TO-220
    11560
    全新原裝,現(xiàn)貨庫存,長期供應(yīng)
    詢價
    IR
    25+
    8880
    原裝認(rèn)準(zhǔn)芯澤盛世!
    詢價
    IR
    23+
    10000
    原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
    詢價
    IR
    10+
    TO-263
    550
    一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
    詢價
    IR
    22+
    SOT-263
    6000
    終端可免費(fèi)供樣,支持BOM配單
    詢價
    IR
    23+
    6000
    專注配單,只做原裝進(jìn)口現(xiàn)貨
    詢價
    IR
    25+
    NV
    860000
    明嘉萊只做原裝正品現(xiàn)貨
    詢價
    IR
    23+
    SOT-263
    7000
    詢價
    IR
    24+
    80000
    只做自己庫存 全新原裝進(jìn)口正品假一賠百 可開13%增
    詢價
    IR
    22+
    TO-263
    20000
    公司只做原裝 品質(zhì)保障
    詢價
    更多IRG4BC30供應(yīng)商 更新時間2026-1-22 11:04:00

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