N-CHANNEL POWER MOSFETS

文件：912.37 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-CHANNEL POWER MOSFETS

文件：847.01 Kbytes 頁數(shù)：5 Pages

ARTSCHIP

45 Ampere Typical N-Channel Trench Power MOSFETs

文件：442.92 Kbytes 頁數(shù)：2 Pages

THINKISEMI

思祁半導(dǎo)體

45 Ampere Typical N-Channel Trench Power MOSFETs

文件：600.9 Kbytes 頁數(shù)：2 Pages

THINKISEMI

思祁半導(dǎo)體

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

文件：792.65 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin a

文件：121.83 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

VDSS = 60V RDS(on) = 0.023? ID = 48A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design tha

文件：96.06 Kbytes 頁數(shù)：8 Pages

IRF

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：163.26 Kbytes 頁數(shù)：10 Pages

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：239.75 Kbytes 頁數(shù)：11 Pages

IRF

HEXFET? Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：230.61 Kbytes 頁數(shù)：10 Pages

IRF