| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFZ44E | Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) VDSS = 60V RDS(on) = 0.023? ID = 48A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design tha 文件：96.06 Kbytes 頁(yè)數(shù)：8 Pages | IRF | IRF | |
IRFZ44E | N-Channel MOSFET Transistor 文件：393.64 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | |
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：163.26 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：230.61 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：239.75 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：147.36 Kbytes 頁(yè)數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：163.26 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：230.61 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：239.75 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：239.75 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRFZ44EPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
60 V
- RDS (on) @10V max：
23 m?
- ID @25°C max：
48 A
- QG typ @10V：
40 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-220 |
9600 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng) |
詢(xún)價(jià) | ||
IR |
24+ |
原廠(chǎng)封裝 |
1659 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
IR |
23+ |
TO-220-3 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢(xún)價(jià) | ||
IR |
18+ |
TO-220 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢(xún)價(jià) | ||
IR |
20+ |
TO-220 |
38900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢(xún)價(jià) | ||
IR |
2447 |
TO-220 |
100500 |
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢(xún)價(jià) | ||
INFINEON |
25+ |
TO-220 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) | ||
2023+ |
10 |
詢(xún)價(jià) | |||||
IR |
23+ |
TO-220 |
4500 |
原裝正品假一罰百!可開(kāi)增票! |
詢(xún)價(jià) |
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