N-CHANNEL POWER MOSFET

文件：287.41 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.768 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRFR014, SiHFR014) ? Straight lead (IRFU014, SiHFU014) ? Available in tape and reel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99

文件：892.51 Kbytes 頁數(shù)：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni

文件：172.07 Kbytes 頁數(shù)：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：4.2849 Mbytes 頁數(shù)：7 Pages

KERSEMI

isc N-Channel MOSFET Transistor

文件：345.29 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET

文件：1.92902 Mbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.92902 Mbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Dynamic dV/dt rating\nSurface-mount (IRFR014, SiHFR014)\nStraight lead (IRFU014, SiHFU014);

Vishay

威世

ADVANCED POWER MOSFET

FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS = 60V ? Lower RDS(ON): 0.097? (Typ.)

文件：218.75 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體