ADVANCED POWER MOSFET

FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS = 60V ? Lower RDS(ON): 0.097? (Typ.)

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

文件：345.32 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni

文件：2.0989 Mbytes 頁數(shù)：10 Pages

IRF

Power MOSFET

文件：1.92902 Mbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.768 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司