Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 250V ■ Lower RDS(ON) : 0.214 Ω (Typ.)

文件：237.97 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current : 10 A (Max.) @ VDS =

文件：59.09 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Advanced Power MOSFET

ONSEMI

安森美半導(dǎo)體

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：900.35 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

文件：265.11 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Advanced Power MOSFET

FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS= 250V ? Lower RDS(ON): 0.214?(Typ.)

文件：229.46 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體