Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.071 Ω(Typ.)

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area

文件：59.03 Kbytes 頁數(shù)：2 Pages

ISC

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Advanced Power MOSFET

ONSEMI

安森美半導(dǎo)體

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：898.48 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：651.17 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：673.28 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體