isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8.5A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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isc N-Channel MOSFET Transistor

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Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 250V ■ Lower RDS(ON) : 0.214 Ω (Typ.)

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current : 10 A (Max.) @ VDS =

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250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

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Advanced Power MOSFET

ONSEMI

安森美半導(dǎo)體

250V N-Channel MOSFET

ONSEMI

安森美半導(dǎo)體