Advanced Power MOSFET

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FAIRCHILD

仙童半導(dǎo)體

Advanced Power MOSFET

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FAIRCHILD

仙童半導(dǎo)體

Advanced Power MOSFET

ONSEMI

安森美半導(dǎo)體

8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

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INTERSIL

HEXFET POWER MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Surface Mount (IRFR120) ? Str

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IRF

IRFR120

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

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VISHAYVishay Siliconix

威世威世科技公司