| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFPC60 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude 文件：2.44277 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFPC60 | Power MOSFET(Vdss=600V, Rds(on)=0.40ohm, Id=16A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast S 文件：162.21 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
IRFPC60 | Power MOSFET 文件：2.46072 Mbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFET(Vdss=600V, Rds(on)=0.40ohm, Id=16A) Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件：343.43 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件：640.07 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total 文件：110.13 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件：640.07 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude 文件：2.44277 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：2.46072 Mbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：689.15 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- 漏源電壓（Vdss）：
600V
- 柵源極閾值電壓（最大值）：
4V @ 250uA
- 漏源導(dǎo)通電阻（最大值）：
400 mΩ @ 9.6A，10V
- 類型：
N 溝道
- 功率耗散（最大值）：
280W
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 3P |
161279 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
2450+ |
TO-247 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
IR |
24+ |
TO-247AC |
8866 |
詢價(jià) | |||
IR |
25+ |
TO-3P |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
IR |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
25+ |
TO247 |
18600 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
06+ |
TO-247 |
1000 |
自己公司全新庫存絕對有貨 |
詢價(jià) | ||
IR |
2015+ |
TO-247AC |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
1217 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢價(jià) |
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