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          首頁(yè) >IRFPC50>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRFPC50

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

          文件:1.43395 Mbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFPC50

          Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)

          文件:164.56 Kbytes 頁(yè)數(shù):6 Pages

          IRF

          IRFPC50A

          Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A)

          SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Su

          文件:95.8 Kbytes 頁(yè)數(shù):8 Pages

          IRF

          IRFPC50A

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive ?? Requirement ? Improved Gate, Avalanche and Dynamic dV/dt ?? Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage ?? and Current ? Effective Coss Specified ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Switch

          文件:893.51 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFPC50A

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance please see www.

          文件:225.15 Kbytes 頁(yè)數(shù):11 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFPC50A_V01

          Power MOSFET

          FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance please see www.

          文件:225.15 Kbytes 頁(yè)數(shù):11 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFPC50APBF

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive ?? Requirement ? Improved Gate, Avalanche and Dynamic dV/dt ?? Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage ?? and Current ? Effective Coss Specified ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Switch

          文件:893.51 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFPC50LC

          Power MOSFET

          DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Thes

          文件:583.95 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFPC50LC

          Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)

          Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

          文件:333.89 Kbytes 頁(yè)數(shù):8 Pages

          IRF

          IRFPC50LC

          Power MOSFET

          FEATURES ? Ultra low gate charge ? Reduced gate drive requirement ? Enhanced 30 V VGS rating ? Reduced Ciss, Coss, Crss ? Isolated central mounting hole ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Material categorization: for definitions of compliance please see www.vishay.com/d

          文件:643.8 Kbytes 頁(yè)數(shù):11 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          技術(shù)參數(shù)

          • 漏源電壓(Vdss):

            600V

          • 柵源極閾值電壓(最大值):

            4V @ 250uA

          • 漏源導(dǎo)通電阻(最大值):

            600 mΩ @ 6A,10V

          • 類型:

            N 溝道

          • 功率耗散(最大值):

            180W

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          IR
          24+
          TO 247
          161332
          明嘉萊只做原裝正品現(xiàn)貨
          詢價(jià)
          IR
          2024+
          N/A
          70000
          柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          詢價(jià)
          IR
          25+
          TO-3P
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          IR
          2015+
          SOP/DIP
          19889
          一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
          詢價(jià)
          IR
          06+
          TO-247
          1200
          全新原裝 絕對(duì)有貨
          詢價(jià)
          IR
          24+
          TO-3P
          1000
          詢價(jià)
          IR
          2015+
          TO-247AC
          12500
          全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
          詢價(jià)
          IR
          24+
          原廠封裝
          3162
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          IR
          17+
          TO-247
          6200
          100%原裝正品現(xiàn)貨
          詢價(jià)
          IR
          23+
          TO-3P
          5000
          原裝正品,假一罰十
          詢價(jià)
          更多IRFPC50供應(yīng)商 更新時(shí)間2026-1-21 19:10:00
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