| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFPC50 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude 文件:1.43395 Mbytes 頁(yè)數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFPC50 | Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A) 文件:164.56 Kbytes 頁(yè)數(shù):6 Pages | IRF | IRF | |
Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A) SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Su 文件:95.8 Kbytes 頁(yè)數(shù):8 Pages | IRF | IRF | ||
Power MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive ?? Requirement ? Improved Gate, Avalanche and Dynamic dV/dt ?? Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage ?? and Current ? Effective Coss Specified ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Switch 文件:893.51 Kbytes 頁(yè)數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance please see www. 文件:225.15 Kbytes 頁(yè)數(shù):11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance please see www. 文件:225.15 Kbytes 頁(yè)數(shù):11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive ?? Requirement ? Improved Gate, Avalanche and Dynamic dV/dt ?? Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage ?? and Current ? Effective Coss Specified ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Switch 文件:893.51 Kbytes 頁(yè)數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Thes 文件:583.95 Kbytes 頁(yè)數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A) Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件:333.89 Kbytes 頁(yè)數(shù):8 Pages | IRF | IRF | ||
Power MOSFET FEATURES ? Ultra low gate charge ? Reduced gate drive requirement ? Enhanced 30 V VGS rating ? Reduced Ciss, Coss, Crss ? Isolated central mounting hole ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Material categorization: for definitions of compliance please see www.vishay.com/d 文件:643.8 Kbytes 頁(yè)數(shù):11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- 漏源電壓(Vdss):
600V
- 柵源極閾值電壓(最大值):
4V @ 250uA
- 漏源導(dǎo)通電阻(最大值):
600 mΩ @ 6A,10V
- 類型:
N 溝道
- 功率耗散(最大值):
180W
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 247 |
161332 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
25+ |
TO-3P |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
IR |
2015+ |
SOP/DIP |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
06+ |
TO-247 |
1200 |
全新原裝 絕對(duì)有貨 |
詢價(jià) | ||
IR |
24+ |
TO-3P |
1000 |
詢價(jià) | |||
IR |
2015+ |
TO-247AC |
12500 |
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng) |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
3162 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
17+ |
TO-247 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
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- NE5532A
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相關(guān)庫(kù)存
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- MAX232ESE
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- SI7913DN
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- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
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- TL074
- TL074
- TL074

