HEXFET?Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) ● Lead -Free Applications ● Switch Mode Power Supply ( SMPS

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IRF

Power MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Lead (Pb)-free Available APPLICATIONS ? Switch Mode Power Supply (SMPS)

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

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FAIRCHILD

仙童半導(dǎo)體

Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)

VDSS = 500V RDS(on) = 0.40? ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds

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IRF

Power MOSFET

VDS (V) 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvement

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VISHAYVishay Siliconix

威世威世科技公司