8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

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INTERSIL

Power MOSFET

FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast Switching ? Ease of Paralleling ? Simple Drive Requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.8A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast S

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IRF

Dynamic dv/dt Rating

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage oisiance between pins tc me

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

? Dynamic dV/dt Rating\n? Repetitive Avalanche Rated\n? Isolated Central Mounting Hole;

Vishay

威世

Power MOSFET

FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast Switching ? Ease of Paralleling ? Simple Drive Requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

文件：836.4 Kbytes 頁數(shù)：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

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FAIRCHILD

仙童半導(dǎo)體

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast S

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IRF

isc N-Channel MOSFET Transistor

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ISC

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