| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFP360LC | Power MOSFET FEATURES ? Ultra low gate charge ? Reduced gate drive requirement ? Enhanced 30 V VGS rating ? Reduced Ciss, Coss, Crss ? Isolated central mounting hole ? Dynamic dV/dt rated ? Repetitive avalanche rated ? Material categorization: for definitions of compliance please see www.vishay.com/do 文件：311.46 Kbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFP360LC | Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A) Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件：343.84 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
IRFP360LC | isc N-Channel MOSFET Transistor 文件：325.19 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
IRFP360LC | Power MOSFET 文件：260.38 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFP360LC | Power MOSFET 文件：1.04588 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFP360LC | Power MOSFET 文件：1.06844 Mbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFET FEATURES ? Ultra low gate charge ? Reduced gate drive requirement ? Enhanced 30 V VGS rating ? Reduced Ciss, Coss, Crss ? Isolated central mounting hole ? Dynamic dV/dt rated ? Repetitive avalanche rated ? Material categorization: for definitions of compliance please see www.vishay.com/do 文件：311.46 Kbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件：347.88 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET 文件：1.04588 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：1.06844 Mbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細(xì)參數(shù)
- 型號：
IRFP360LC
- 功能描述：
MOSFET N-Chan 400V 23 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-247-3 |
8866 |
詢價(jià) | |||
IR |
2015+ |
TO-247AC |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
2101 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
25+ |
TO-3P |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
IR |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
VISHAY |
25+ |
TO247-3 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
原裝 |
1923+ |
TO-3P |
9200 |
公司原裝現(xiàn)貨假一罰十特價(jià)歡迎來電咨詢 |
詢價(jià) | ||
IR |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VISHAY/威世 |
25+ |
TO-247 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
Vishay Siliconix |
22+ |
TO2473 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) |
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