20A, 200V, 0.180 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re ? 20A, 200V\n? rDS(ON) = 0.180?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Related Literature\n- TB334 “Guidelines for Soldering Surface Mount\nComponents to PC Boards”;

Renesas

瑞薩

Power MOSFET

? Dynamic dV/dt Rating\n? Repetitive Avalanche Rated\n? Isolated Central Mounting Hole;

Vishay

威世

200V N-Channel Power MOSFET

MINOS

邁諾斯

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Isolated central mounting hole ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

文件：893.6 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-: VDSS= 200V(Min) ·Static Drain-Source On-Resistance: RDS(on) = 0.18Ω(Max) ·Fast Switching

文件：67.81 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.18? ID = 20 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 μA(Max.) @ VDS = 200V Lower RDS(ON) : 0.144?(Typ.)

文件：265.93 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：697.99 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·Fast Switching

文件：69.92 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

文件：3.99809 Mbytes 頁數(shù)：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclu

文件：1.60332 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司