| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Features ? Ultra Low On-Resistance - rDS(ON) = 0.040?, VGS = 10V ? Simulation Models - Temperature Compensated PSPICE? and SABER? Electrical Models - Spice and SABER? Thermal Impedance Models - www.intersil.com ? Peak Current vs Pulse Width Curve ? UIS Rating Curve 文件:126.76 Kbytes 頁數(shù):10 Pages | INTERSIL | INTERSIL | ||
Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件:158.05 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件:345.06 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
Preferred for commercail-industrial applications where higher power levels preclude the use of TO-220 devices. Description Third Generation HEXFETs from Internatioal Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels 文件:1.22262 Mbytes 頁數(shù):8 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud 文件:1.82938 Mbytes 頁數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件:1.76683 Mbytes 頁數(shù):9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件:1.78938 Mbytes 頁數(shù):11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
N-Channel MOSFET Transistor 文件:334.3 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
HEXFET? Power MOSFET 文件:222.97 Kbytes 頁數(shù):10 Pages | IRF | IRF | ||
Advanced Process Technology 文件:270.29 Kbytes 頁數(shù):9 Pages | IRF | IRF |
技術(shù)參數(shù)
- Ptotmax:
310 W
- Qgd:
53.3 nC
- QG(typ @10V):
120 nC
- RDS (on)(@10V) max:
5.3 m?
- RthJCmax:
0.49 K/W
- Tjmax:
175 °C
- VDSmax:
55 V
- VGS(th):
3 V
- VGSmax:
20 V
- Mounting:
THT
- Package:
TO-247
- Operating Temperature:
-55 °C to 175 °C
- Polarity:
N
- Special Features:
Wide SOA
- Budgetary Price €/1k:
1.08
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
TO-247 |
20300 |
VISHAY/威世原裝特價IRFP140即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
IR |
24+ |
TO 3P |
160915 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ONSEMI |
25+ |
N/A |
21000 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
IR |
25+ |
PLCC44 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
24+ |
1100 |
詢價 | |||||
IR |
06+ |
TO-247 |
800 |
全新原裝 絕對有貨 |
詢價 | ||
IR |
15+ |
TO-247 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應 |
詢價 | ||
IR |
24+ |
原廠封裝 |
300 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
17+ |
TO-247 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢價 |
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