| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFP140 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud 文件:1.82938 Mbytes 頁數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFP140 | 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching 文件:104.33 Kbytes 頁數(shù):7 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
IRFP140 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Isolated central mounting hole ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not 文件:1.00904 Mbytes 頁數(shù):11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFP140 | iscN-Channel MOSFET Transistor DESCRIPTION ? Designed for application such as switching regulators, switching convertors, motor drivers and so on. FEATURES ? Drain Current –ID= 31A@ TC=25℃ ? Drain Source Voltage- : VDSS= 100V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.077Ω(Max) ? SOA is power dissipati 文件:444.28 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
IRFP140 | Power MOSFET 文件:1.78938 Mbytes 頁數(shù):11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFP140 | Power MOSFET 文件:1.76683 Mbytes 頁數(shù):9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFP140 | 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET | ONSEMI 安森美半導體 | ONSEMI | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Isolated central mounting hole ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not 文件:1.00904 Mbytes 頁數(shù):11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp 文件:196.42 Kbytes 頁數(shù):9 Pages | IRF | IRF | ||
Advanced Power MOSFET FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.041 Ω(Typ.) 文件:256.18 Kbytes 頁數(shù):7 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD |
技術(shù)參數(shù)
- Ptotmax:
310 W
- Qgd:
53.3 nC
- QG(typ @10V):
120 nC
- RDS (on)(@10V) max:
5.3 m?
- RthJCmax:
0.49 K/W
- Tjmax:
175 °C
- VDSmax:
55 V
- VGS(th):
3 V
- VGSmax:
20 V
- Mounting:
THT
- Package:
TO-247
- Operating Temperature:
-55 °C to 175 °C
- Polarity:
N
- Special Features:
Wide SOA
- Budgetary Price €/1k:
1.08
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
TO-247 |
20300 |
VISHAY/威世原裝特價IRFP140即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
IR |
24+ |
TO 3P |
160915 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ONSEMI |
25+ |
N/A |
21000 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
IR |
25+ |
PLCC44 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
24+ |
1100 |
詢價 | |||||
IR |
06+ |
TO-247 |
800 |
全新原裝 絕對有貨 |
詢價 | ||
IR |
15+ |
TO-247 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
IR |
24+ |
原廠封裝 |
300 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
17+ |
TO-247 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢價 |
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