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          首頁 >IRFP054>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRFP054_V02

          Power MOSFET

          FEATURES ? Dynamic dV/dt rating ? Isolated central mounting hole ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides i

          文件:846.67 Kbytes 頁數:11 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFP054N

          Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A??

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:109.27 Kbytes 頁數:8 Pages

          IRF

          IRFP054N

          N-Channel MOSFET Transistor

          ? DESCRITION ? Ultra Low On-resistance ? Fast Switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤12m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:335.03 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          IRFP054N

          Advanced Process Technology

          Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. ● Advanced Process Technology ● Dynamic dv/dt

          文件:729.95 Kbytes 頁數:8 Pages

          KERSEMI

          IRFP054NPBF

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:1.49884 Mbytes 頁數:9 Pages

          IRF

          IRFP054PBF

          isc N-Channel MOSFET Transistor

          ? FEATURES ? With TO-247 packaging ? Uninterruptible power supply ? High speed switching ? Simple drive requirements ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operationz ? APPLICATIONS ? Switching applications

          文件:325.17 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          IRFP054PBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

          文件:1.53169 Mbytes 頁數:8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFP054V

          Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A??

          Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

          文件:216.41 Kbytes 頁數:8 Pages

          IRF

          IRFP054VPBF

          HEXFET? Power MOSFET ( VDSS = 60V , RDS(on) = 9.0m廓 , ID = 93A )

          Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

          文件:176.31 Kbytes 頁數:9 Pages

          IRF

          IRFP054_11

          Power MOSFET

          文件:1.56179 Mbytes 頁數:9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          技術參數

          • OPN:

            IRFP054NPBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO247

          • VDS max:

            55 V

          • RDS (on) @10V max:

            12 m?

          • ID @25°C max:

            81 A

          • QG typ @10V:

            86.7 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V

          • VGS(th) max:

            4 V

          • VGS(th):

            3 V

          • Technology:

            IR MOSFET?

          供應商型號品牌批號封裝庫存備注價格
          VISHAY/威世
          25+
          TO-247
          20300
          VISHAY/威世原裝特價IRFP054即刻詢購立享優(yōu)惠#長期有貨
          詢價
          IR
          24+
          TO-247AC
          8866
          詢價
          IR
          25+
          管3P
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          IR
          05+
          TO-247
          2000
          全新原裝 絕對有貨
          詢價
          IR
          2015+
          TO-247AC
          12500
          全新原裝,現貨庫存長期供應
          詢價
          IR
          24+
          原廠封裝
          622
          原裝現貨假一罰十
          詢價
          IR
          17+
          TO-3P
          6200
          詢價
          IR
          23+
          SOP/DIP
          5000
          原裝正品,假一罰十
          詢價
          IR
          16+
          TO-3P
          10000
          全新原裝現貨
          詢價
          INTERNATIONA
          23+
          原廠封裝
          9888
          專做原裝正品,假一罰百!
          詢價
          更多IRFP054供應商 更新時間2026-1-21 18:07:00
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