N–CHANNEL POWER MOSFET

VDSS 200V ID(cont) 27.4A RDS(on) 0.100? FEATURES ? N–CHANNEL MOSFET ? HIGH VOLTAGE ? INTEGRAL PROTECTION DIODE ? HERMETIC ISOLATED TO-254 PACKAGE ? CERAMIC SURFACE MOUNT PACKAGE OPTION

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SEME-LAB

TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)

HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on state resistance combined with high transconductance. HEXFET transistors also feature all of the well established advantages of MOSFETs

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IRF

400V. N-CHANNEL HEXFET MOSFETTECHNOLOGY

POWER MOSFET THRU-HOLE (TO-254AA) HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

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IRF

POWER MOSFET THRU-HOLE (TO-254AA)

Part Number RDS(on) ID IRFM350 0.315 ? 14A HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transis

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IRF

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=23 A@ TC=25℃ · Drain Source Voltage -VDSS= 400V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

400V, N-CHANNEL HEXFET MOSFETTECHNOLOGY

HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s

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IRF

POWER MOSFET THRU-HOLE (TO-254AA)

HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically Seale

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IRF

POWER MOSFET THRU-HOLE (TO-254AA)

HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s

文件：214.26 Kbytes 頁數(shù)：7 Pages

IRF

POWER MOSFET THRU-HOLE (TO-254AA)

HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s

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IRF

MOSFET

Features VDS (V) = 25V RDS(ON)

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EVVOSEMI

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