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首頁 >IRFM>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
IRFM210	文件：705.26 Kbytes Page：8 Pages	200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan 文件：705.26 Kbytes 頁數(shù)：8 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRFM210A	文件：269.52 Kbytes Page：7 Pages	Advanced Power MOSFET (200V, 1.5ohm, 0.77A) FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 1.169 Ω(Typ.) 文件：269.52 Kbytes 頁數(shù)：7 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRFM210B	文件：705.26 Kbytes Page：8 Pages	200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan 文件：705.26 Kbytes 頁數(shù)：8 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRFM214B	文件：692.69 Kbytes Page：8 Pages	250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件：692.69 Kbytes 頁數(shù)：8 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRFM220A	文件：277.14 Kbytes Page：7 Pages	Advanced Power MOSFET FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.626 Ω(Typ.) 文件：277.14 Kbytes 頁數(shù)：7 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRFM220B	文件：727.8 Kbytes Page：8 Pages	200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件：727.8 Kbytes 頁數(shù)：8 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRFM224B	文件：705.97 Kbytes Page：8 Pages	250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件：705.97 Kbytes 頁數(shù)：8 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRFM240	文件：178.6 Kbytes Page：7 Pages	POWER MOSFET THRU-HOLE 200V, N-CHANNEL HEXFET? MOSFET TECHNOLOGY HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of th 文件：178.6 Kbytes 頁數(shù)：7 Pages	IRF	IRF
IRFM240	文件：854.64 Kbytes Page：3 Pages	POWER MOSFET THRU-HOLE (TO-254AA) 200V. N-CHANNEL Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically Sealed ■ Electrically Isolated ■ Dynamic dv/dt Rating ■ Light-weight 文件：854.64 Kbytes 頁數(shù)：3 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
IRFM250	文件：163.11 Kbytes Page：7 Pages	POWER MOSFET THRU-HOLE (TO-254AA) Part Number RDS(on) ID IRFM250 0.100 ? 27.4A HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductan 文件：163.11 Kbytes 頁數(shù)：7 Pages	IRF	IRF

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技術(shù)參數(shù)

Pb-free：
Pb
Status：
Active
Channel Polarity：
N-Channel
Configuration：
Single
V(BR)DSS Min (V)：
100
VGS Max (V)：
±20
VGS(th) Max (V)：
4
ID Max (A)：
2.3
PD Max (W)：
2.4
RDS(on) Max @ VGS = 10 V(mΩ)：
200
Qg Typ @ VGS = 10 V (nC)：
16
Ciss Typ (pF)：
370
Package Type：
SOT-223-4/TO-261-4

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳誠思涵科技有限公司	IRFM	RICOH	16+	SOT-153	10000	進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	IRFM	RICOH	17+	SOT-153	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRFM		23+		7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市福安甌科技有限公司	IRFM210A	IR	25+	SOT223	2052	⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IRFM120ATF	FAIRCHILD		SOT-223	1000	原裝長(zhǎng)期供貨!	詢價(jià)
深圳市勤思達(dá)科技有限公司	IRFM150	IOR	1430+	TO220	5800	全新原裝,公司大量現(xiàn)貨供應(yīng),絕對(duì)正品	詢價(jià)
深圳市利加科技有限公司	IRFM064	IR	16+	NA	8800	原裝現(xiàn)貨,貨真價(jià)優(yōu)	詢價(jià)
深圳市卓越微芯電子有限公司	IRFM214	FSC	25+	SOT-223	8000	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	IRFM440	ir	24+	N/A	6980	原裝現(xiàn)貨,可開13%稅票	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	IRFM240	IR	23+	TO-254A	5000	原裝正品,假一罰十	詢價(jià)

更多IRFM供應(yīng)商更新時(shí)間2026-1-21 10:03:00

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