| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFIBC40 | Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri 文件：170.43 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：1.45775 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri 文件：170.43 Kbytes 頁數(shù)：6 Pages | IRF | IRF | ||
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri 文件：229.37 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri 文件：991.44 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：1.45775 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：829.12 Kbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
SEMICONDUCTORS 文件：2.43533 Mbytes 頁數(shù)：31 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
iscN-Channel MOSFET Transistor 文件：319.15 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power MOSFET 文件：829.12 Kbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細參數(shù)
- 型號：
IRFIBC40
- 制造商：
IRF
- 制造商全稱：
International Rectifier
- 功能描述：
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
15+ |
TO-220F |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
IR |
23+ |
TO-220F |
5000 |
專做原裝正品,假一罰百! |
詢價 | ||
IR |
20+ |
TO-220F |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
2447 |
TO-220F |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
IR |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
25+ |
TO-220F |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價 | ||
IR |
26+ |
TO-220F |
86720 |
全新原裝正品價格最實惠 假一賠百 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-220F |
89630 |
當天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220F |
8000 |
只做原裝現(xiàn)貨 |
詢價 |
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