| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFIBC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Isolated Package ? High Voltage Isolation = 2.5 KVRMS ? Sink to Lead Creepage Dist. = 4.8 文件：167.28 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Isolated Package ? High Voltage Isolation = 2.5 KVRMS ? Sink to Lead Creepage Dist. = 4.8 文件：167.28 Kbytes 頁數(shù)：6 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati 文件：1.47864 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：3.99545 Mbytes 頁數(shù)：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati 文件：1.47864 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Isolated Package ? High Voltage Isolation = 2.5 KVRMS ? Sink to Lead Creepage Dist. = 4.8 文件：920.46 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：3.99545 Mbytes 頁數(shù)：7 Pages | KERSEMI | KERSEMI | ||
iscN-Channel MOSFET Transistor 文件：319.25 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
IRFIBC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) | Infineon 英飛凌 | Infineon | |
Power MOSFET | Vishay 威世 | Vishay |
詳細參數(shù)
- 型號：
IRFIBC20
- 制造商：
IRF
- 制造商全稱：
International Rectifier
- 功能描述：
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220F |
10000 |
專做原裝正品,假一罰百! |
詢價 | ||
IR |
2447 |
TO-220F |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
VB |
25+ |
TO-220F |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價 | ||
IR |
26+ |
TO-220 |
86720 |
全新原裝正品價格最實惠 假一賠百 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-220F |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220F |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220F |
7000 |
詢價 | |||
I |
25+ |
TO-TO-220F |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
IR |
24+ |
TO-220F |
4500 |
只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718 |
詢價 |
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