| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFI830 | 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig 文件：677.18 Kbytes 頁數(shù)：9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
IRFI830 | 500V N-Channel MOSFET | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig 文件：677.18 Kbytes 頁數(shù)：9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=3.1A) DESCRIPTION Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial ap 文件：170.66 Kbytes 頁數(shù)：6 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：1.56994 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：1.56994 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：910.77 Kbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
N-Channel MOSFET uses advanced trench technology 文件：979.57 Kbytes 頁數(shù)：4 Pages | DOINGTER 杜因特 | DOINGTER | ||
Power MOSFET 文件：910.77 Kbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：910.77 Kbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細參數(shù)
- 型號：
IRFI830
- 功能描述：
MOSFET 500V N-Channel B-FET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
TO-220 |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
東芝 |
24+ |
TO-220 |
50 |
詢價 | |||
IR |
06+ |
TO220 |
4200 |
自己公司全新庫存絕對有貨 |
詢價 | ||
IR |
15+ |
TO-220F |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
IR |
17+ |
TO-220F |
6200 |
詢價 | |||
IR/VISHAY |
23+ |
TO-TO-220F |
12300 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-220F |
89630 |
當天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220 |
7000 |
詢價 | |||
IR/VISHAY |
25+ |
TO-TO-220F |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 |
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