isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.1A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：4.03867 Mbytes 頁數(shù)：7 Pages

KERSEMI

Power MOSFET

文件：1.64596 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.64435 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：585.44 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.64435 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? Fast switching;

Vishay

威世

Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)

Infineon

英飛凌

MOS(場效應管)

Vishay

威世