| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFBG30 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati 文件：1.52102 Mbytes 頁(yè)數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBG30 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH 文件：611.63 Kbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBG30 | Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A) Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A) 文件：167.99 Kbytes 頁(yè)數(shù)：6 Pages | IRF | IRF | |
IRFBG30 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation 文件：4.03867 Mbytes 頁(yè)數(shù)：7 Pages | KERSEMI | KERSEMI | |
IRFBG30 | isc N-Channel MOSFET Transistor 文件：265.52 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | |
IRFBG30 | Power MOSFET 文件：1.64596 Mbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBG30 | Power MOSFET 文件：585.44 Kbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBG30 | Power MOSFET 文件：1.64435 Mbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH 文件：611.63 Kbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati 文件：1.52102 Mbytes 頁(yè)數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- 漏源電壓（Vdss）：
1000V
- 柵源極閾值電壓（最大值）：
4V @ 250uA
- 漏源導(dǎo)通電阻（最大值）：
5 Ω @ 1.9A，10V
- 類(lèi)型：
N 溝道
- 功率耗散（最大值）：
125W
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY |
22+ |
原廠封裝 |
15850 |
原裝正品，實(shí)單請(qǐng)聯(lián)系 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
4050 |
原廠原裝正品 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
23+ |
TO-220 |
7850 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
IR |
06+ |
TO-220 |
8000 |
自己公司全新庫(kù)存絕對(duì)有貨 |
詢價(jià) | ||
IR |
1430+ |
TO220 |
5800 |
全新原裝,公司大量現(xiàn)貨供應(yīng),絕對(duì)正品 |
詢價(jià) | ||
VISHAY |
24+/25+ |
TO-220 |
100 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢價(jià) | ||
IR |
25+ |
TO220 |
570 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
VISHAY |
2016+ |
TO220 |
3000 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢價(jià) | ||
ir |
24+ |
原裝 |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
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- NE5532
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- NE5532
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- NE5532A
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相關(guān)庫(kù)存
更多- NE5532
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- MAX232ESE
- NE5533
- SI7970DP
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- SI7913DN
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- SI7946DP
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- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
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- TL074
- TL074
- TL074
