| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF9952 | Power MOSFET(Vdss=-30V) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：134.65 Kbytes 頁數(shù)：10 Pages | IRF | IRF | |
IRF9952 | 采用 SO-8 封裝的 30V 雙 N 通道和 P 通道 HEXFET 功率 MOSFET \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 雙 N 通道和 P 通道 MOSFET; | Infineon 英飛凌 | Infineon | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：224.24 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description These HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit 文件：280.44 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Advanced Process Technology Description These HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit 文件：269.52 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Advanced Process Technology Description These HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit 文件：269.52 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Generation V Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：229.77 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
N&P-Channel Complementary MOSFET General Features ?+ N-Channel ? Vos=30V. o=B.0A Rosny =17m0@ Vos=10V Rosco =24m0@Vos=4 5V + P-Channel * Vos=-30V,Ip=-6A Rosn =40mQ @Ves=-10V Rosco =60mQ @Vos=-45V ?High Power and current handing capabilly ?Lead ree products acquired ? Surace Mount Package Application 文件：4.0655 Mbytes 頁數(shù)：10 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
ULTRA LOW ON RESISTANCE 文件：229.77 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
ULTRA LOW ON RESISTANCE 文件：229.77 Kbytes 頁數(shù)：10 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF9952TRPBF
- Qualification：
Non-Automotive
- Package name：
SO8
- VDS max：
30 V
- RDS (on) @10V max：
100 m?/250 m?
- RDS (on) @4.5V max：
150 m?/400 m?
- ID @25°C max：
3.5 A/-2.3 A
- QG typ @10V：
6.1 nC/6.9 nC
- Polarity：
N+P
- VGS(th) min：
-1 V/1 V
- Technology：
IR MOSFET?
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
INFINEON/英飛凌 |
2025+ |
SOP-8 |
5000 |
原裝進口價格優(yōu) 請找坤融電子! |
詢價 | ||
IOR |
04/05+ |
SOP8 |
385 |
全新原裝100真實現(xiàn)貨供應 |
詢價 | ||
IR |
25+ |
PLCC44 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IOR |
24+ |
SOP-8 |
1568 |
詢價 | |||
IR |
24+ |
原廠封裝 |
1200 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IOR |
24+ |
SOP-8P |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
IR |
23+ |
SOP8 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
17+ |
SO-8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 |
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