| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A ) Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces 文件：331.4 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
Advanced Process Technology
文件：6.34203 Mbytes 頁數(shù)：8 Pages | KERSEMI | KERSEMI | ||
HEXFET? Power MOSFET
文件：2.55413 Mbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：187.11 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A ) Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces 文件：331.4 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：187.11 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
絲印：F9540NS；Package：TO-263；P-Channel Power MOSFET Application + DC/DC Converter ? Portable equipment and batt ? Power Switch 文件：3.53757 Mbytes 頁數(shù)：5 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dV/dt rating ? Repetitive avalanche rated ? P-channel ? 175 °C operating temperature ? Fast Switching ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provi 文件：206.61 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Coming Soon. If you have some information on related parts, please share useful information by adding links below. 文件：198.15 Kbytes 頁數(shù)：6 Pages | IRF | IRF | ||
Available in Tape and Reel DESCRIPTION The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications beca 文件：778.12 Kbytes 頁數(shù)：8 Pages | KERSEMI | KERSEMI |
技術參數(shù)
- OPN：
IRF9540NPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
-100 V
- RDS (on) @10V max：
117 m?
- ID @25°C max：
-23 A
- QG typ @10V：
64.7 nC
- Polarity：
P
- VGS(th) min：
-2 V
- VGS(th) max：
-4 V
- VGS(th)：
-3 V
- Technology：
IR MOSFET?
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
25+ |
500 |
公司現(xiàn)貨庫存 |
詢價 | ||||
FAIRCHILD |
23+ |
TO-220 |
65400 |
詢價 | |||
IR |
24+ |
TO 220 |
161405 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
Slkor/薩科微 |
24+ |
TO-220 |
50000 |
Slkor/薩科微一級代理,價格優(yōu)勢 |
詢價 | ||
IR |
25+ |
TO220 |
6500 |
十七年專營原裝現(xiàn)貨一手貨源,樣品免費送 |
詢價 | ||
onsemi(安森美) |
25+ |
TO-220AB |
18798 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
IR |
25+ |
PLCC44 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IR |
23+ |
現(xiàn)貨 |
5500 |
現(xiàn)貨,全新原裝 |
詢價 | ||
IR |
06+ |
TO-220 |
6000 |
全新原裝 絕對有貨 |
詢價 |
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