Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

SEMICONDUCTORS

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ETCList of Unclassifed Manufacturers

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Power MOSFET

? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? P-channel;

Vishay

威世

100 V, P-channel power MOSFET

ONSEMI

安森美半導(dǎo)體

Silicon P-Channel Power MOSFET

MINOS

邁諾斯

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

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IRF

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

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KERSEMI

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

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KERSEMI

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：187.11 Kbytes 頁(yè)數(shù)：10 Pages

IRF