Advanced Process Technology

VDSS = -100V RDS(on) = 0.20? ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：767.31 Kbytes 頁數(shù)：11 Pages

IRF

HEXFET? Power MOSFET

VDSS = -100V RDS(on) = 0.20? ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：123.78 Kbytes 頁數(shù)：9 Pages

IRF

P-Channel 100 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Power Switch ? Load Switch in High Current Applications ? DC/DC Converters

文件：1.65887 Mbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導體

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low intern

文件：1.07966 Mbytes 頁數(shù)：10 Pages

KERSEMI

絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；isc P-Channel MOSFET Transistor

? FEATURES ? Static drain-source on-resistance: RDS(on)≤200m?(@VGS= -10V; ID= -8.4A) ? Advanced trench process technology ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Fast switching application.

文件：297.81 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20? ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：173.15 Kbytes 頁數(shù)：10 Pages

IRF

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20? ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：767.31 Kbytes 頁數(shù)：11 Pages

IRF

Advanced Process Technology Surface Mount

VDSS = -100V RDS(on) = 0.20? ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：758.16 Kbytes 頁數(shù)：10 Pages

IRF

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20? ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：767.31 Kbytes 頁數(shù)：11 Pages

IRF

Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20? ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：173.15 Kbytes 頁數(shù)：10 Pages

IRF