Power MOSFET

? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? P-channel;

Vishay

威世

TRANSISTORS

Infineon

英飛凌

12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs

Renesas

瑞薩

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? P-channel ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

文件：158.27 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20? ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：113.13 Kbytes 頁數(shù)：8 Pages

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：2.77627 Mbytes 頁數(shù)：7 Pages

KERSEMI

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low intern

文件：1.20027 Mbytes 頁數(shù)：10 Pages

KERSEMI

isc P-Channel MOSFET Transistor

? FEATURES ? Static drain-source on-resistance: RDS(on)≤200m?(@VGS= -10V; ID= -8.4A) ? Advanced trench process technology ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Fast switching application.

文件：273.47 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20? ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：173.15 Kbytes 頁數(shù)：10 Pages

IRF

Advanced Process Technology Surface Mount

VDSS = -100V RDS(on) = 0.20? ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：758.16 Kbytes 頁數(shù)：10 Pages

IRF