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          首頁 >IRF9233>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF9233

          P-CHANNEL POWER MOSFETS

          FEATURES ? Low RDS(on) ? Improved inductive ruggedness ? Fsat switching times ? Rugged polysilicon gate cell structure ? Low input capacitance ? Extended safe operating area ? Improved high temperature reliability

          文件:508.31 Kbytes 頁數(shù):12 Pages

          SAMSUNG

          三星

          IRF9233

          -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs

          Description These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for

          文件:72.62 Kbytes 頁數(shù):7 Pages

          INTERSIL

          IRFF9233

          Avalanche-Energy-Rated P-Channel Power MOSFETs

          文件:115.08 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          IRFP9233

          P-CHANNEL POWER MOSFETS

          FEATURES ? Low RDS(on) ? Improved inductive ruggedness ? Fsat switching times ? Rugged polysilicon gate cell structure ? Low input capacitance ? Extended safe operating area ? Improved high temperature reliability

          文件:508.31 Kbytes 頁數(shù):12 Pages

          SAMSUNG

          三星

          K9233BLU

          ingress protected

          文件:3.28167 Mbytes 頁數(shù):16 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          詳細(xì)參數(shù)

          • 型號(hào):

            IRF9233

          • 制造商:

            Rochester Electronics LLC

          • 功能描述:

            - Bulk

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          更多IRF9233供應(yīng)商 更新時(shí)間2026-1-21 16:30:00
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