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    首頁 >IRF831>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    IRF831

    N-Channel Power MOSFETs, 4.5 A, 450V/500V

    Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VGS Rated at ± 20V ? Silicon Gate for Fast Switchi

    文件:141.08 Kbytes 頁數(shù):6 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    IRF831

    N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

    Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VGS Rated at ± 20V ? Silicon Gate for Fast Switchi

    文件:122.44 Kbytes 頁數(shù):3 Pages

    NJSEMINew Jersey Semi-Conductor Products, Inc.

    新澤西半導(dǎo)體新澤西半導(dǎo)體公司

    IRF831

    isc N-Channel MOSFET Transistor

    文件:65.489 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    IRF831

    N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

    文件:122.44 Kbytes 頁數(shù):3 Pages

    NJSEMINew Jersey Semi-Conductor Products, Inc.

    新澤西半導(dǎo)體新澤西半導(dǎo)體公司

    IRF831

    Trans MOSFET N-CH 450V 4.5A

    NJS

    NJS

    IRF8313

    絲?。?a target="_blank" title="Marking" href="/irf8313/marking.html">IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

    General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

    文件:2.08671 Mbytes 頁數(shù):6 Pages

    UMW

    友臺(tái)半導(dǎo)體

    IRF8313

    絲印:IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

    General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

    文件:2.16288 Mbytes 頁數(shù):6 Pages

    EVVOSEMI

    翊歐

    IRF8313PBF

    HEXFET Power MOSFET

    Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switc

    文件:260.41 Kbytes 頁數(shù):10 Pages

    IRF

    IRF8313TR

    絲?。?a target="_blank" title="Marking" href="/irf8313/marking.html">IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

    General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

    文件:2.08671 Mbytes 頁數(shù):6 Pages

    UMW

    友臺(tái)半導(dǎo)體

    IRF8313TRPbF

    HEXFET Power MOSFET

    Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switc

    文件:260.41 Kbytes 頁數(shù):10 Pages

    IRF

    技術(shù)參數(shù)

    • Minimum Operating Temperature:

      -55°C

    • Maximum Power Dissipation:

      75000mW

    • Maximum Operating Temperature:

      150°C

    • Maximum Gate Source Voltage:

      ±20V

    • Maximum Drain Source Voltage:

      450V

    • Maximum Continuous Drain Current:

      4.5A

    • Configuration:

      Single

    • Channel Type:

      N

    • Channel Mode:

      Enhancement

    • Category:

      Power MOSFET

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    更多IRF831供應(yīng)商 更新時(shí)間2026-1-21 15:35:00

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