N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS

APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWICHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT

文件：169.46 Kbytes 頁(yè)數(shù)：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體

MOSFET N 500V 2.5A 3,000 OHM

FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Fast Switching ? Ease of Paralleling ? Simple Drive Requirements ? Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switchin

文件：309.19 Kbytes 頁(yè)數(shù)：8 Pages

SYC

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

文件：157.18 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL POWER MOSFETS

FEATURES ● Lower RDS(ON) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Lower input capacitance ● Extended safe operating area ● Improved high temperature reliability

文件：322.92 Kbytes 頁(yè)數(shù)：6 Pages

SAMSUNG

三星

2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：54.37 Kbytes 頁(yè)數(shù)：7 Pages

INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for commercial-industrial applications at power dissipation lev

文件：562.15 Kbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

20A 600V N CHANNEL POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic

文件：93.33 Kbytes 頁(yè)數(shù)：3 Pages

FCI

富加宜

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

文件：140.22 Kbytes 頁(yè)數(shù)：2 Pages

MOTOROLA

摩托羅拉

Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Fast Switching ? Ease of Paralleling ?

文件：169.68 Kbytes 頁(yè)數(shù)：6 Pages

IRF

isc N-Channel MOSFET Transistor

DESCRIPTION · Drain Current –ID= 2.5A@ TC=25℃ · Drain Source Voltage- : VDSS= 500V(Min) · Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) · Fast Switching Speed · Simple Drive Requirements APPLICATIONS · High current,high speed switching · Swith mode power supplies(smps) ·

文件：66.8 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電