| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF7811A | Chipset for DC-DC Converters Description These new devices employ advanced HEXFET? Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessor 文件：128.08 Kbytes 頁數：4 Pages | IRF | IRF | |
IRF7811A | PROVISIONAL DATASHEET Applications ? High Frequency Synchronous Buck Converters for Computer Processor Power ? High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ? 100 R G Tested Benefits ? Very Low RDS(on) at 4.5V VGS ? Ultra-Low Gate Impedance 文件：133.63 Kbytes 頁數：4 Pages | IRF | IRF | |
HEXFET Power MOSFET Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom 文件：195.54 Kbytes 頁數：10 Pages | IRF | IRF | ||
PROVISIONAL DATASHEET Applications ? High Frequency Synchronous Buck Converters for Computer Processor Power ? High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ? 100 R G Tested Benefits ? Very Low RDS(on) at 4.5V VGS ? Ultra-Low Gate Impedance 文件：133.63 Kbytes 頁數：4 Pages | IRF | IRF | ||
N-Channel Application-Specific MOSFETs Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th 文件：132.52 Kbytes 頁數：6 Pages | IRF | IRF | ||
N-Channel Application-Specific MOSFETs Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th 文件：111.46 Kbytes 頁數：6 Pages | IRF | IRF | ||
N-Channel Application-Specific MOSFETs Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th 文件：111.46 Kbytes 頁數：6 Pages | IRF | IRF | ||
N-Channel Application-Specific MOSFETs Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th 文件：111.36 Kbytes 頁數：6 Pages | IRF | IRF | ||
N-Channel Application-Specific MOSFETs 文件：116.7 Kbytes 頁數：6 Pages | IRF | IRF | ||
N-Channel Application-Specific MOSFETs 文件：116.7 Kbytes 頁數：6 Pages | IRF | IRF |
技術參數
- Package?：
SO-8
- VDS?max：
30.0V
- RDS (on)(@4.5V)?max：
14.0m?
- Polarity?：
N
- ID (@ TA=70°C)?max：
13.0A
- ID (@ TA=25°C)?max：
14.0A
- Ptot(@ TA=25°C)?max：
3.5W
- QG?：
17.0nC?
- RthJA?max：
50.0K/W
- Mounting?：
SMD
- Tj?max：
150.0°C
- Moisture Sensitivity Level?：
1
- Qgd?：
5.1nC?
- VGS?max：
20.0V
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IOR |
2025+ |
SSOP |
4119 |
全新原裝、公司現貨熱賣 |
詢價 | ||
IR |
2450+ |
SO-8 |
9850 |
只做原裝正品現貨或訂貨假一賠十! |
詢價 | ||
IR |
2025+ |
SOP-8 |
5000 |
原裝進口價格優(yōu) 請找坤融電子! |
詢價 | ||
IR |
SOP8 |
630 |
正品原裝--自家現貨-實單可談 |
詢價 | |||
IOR |
25+ |
PLCC |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IR |
13+ |
SOP-8 |
71558 |
原裝分銷 |
詢價 | ||
IR |
24+/25+ |
139 |
原裝正品現貨庫存價優(yōu) |
詢價 | |||
IOR |
24+ |
SMD |
1314 |
詢價 | |||
IR |
00+ |
SO-8 |
1000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
IR |
23+ |
DIP16 |
5000 |
原裝正品,假一罰十 |
詢價 |
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