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          首頁 >IRF7811APBF>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF7811APBF

          HEXFET Power MOSFET

          Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

          文件:195.54 Kbytes 頁數(shù):10 Pages

          IRF

          IRF7811APBF

          HEXFET Power MOSFET

          Infineon

          英飛凌

          IRF7811ATR

          PROVISIONAL DATASHEET

          Applications ? High Frequency Synchronous Buck Converters for Computer Processor Power ? High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ? 100 R G Tested Benefits ? Very Low RDS(on) at 4.5V VGS ? Ultra-Low Gate Impedance

          文件:133.63 Kbytes 頁數(shù):4 Pages

          IRF

          IRF7811AV

          N-Channel Application-Specific MOSFETs

          Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

          文件:132.52 Kbytes 頁數(shù):6 Pages

          IRF

          IRF7811AV

          N-Channel Application-Specific MOSFETs

          Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

          文件:111.46 Kbytes 頁數(shù):6 Pages

          IRF

          詳細參數(shù)

          • 型號:

            IRF7811APBF

          • 功能描述:

            MOSFET N-CH 28V 11A 8-SOIC

          • RoHS:

          • 類別:

            分離式半導(dǎo)體產(chǎn)品 >> FET - 單

          • 系列:

            HEXFET®

          • 標(biāo)準(zhǔn)包裝:

            1,000

          • 系列:

            MESH OVERLAY™ FET

          • 型:

            MOSFET N 通道,金屬氧化物 FET

          • 特點:

            邏輯電平門

          • 漏極至源極電壓(Vdss):

            200V 電流 - 連續(xù)漏極(Id) @ 25°

          • C:

            18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

          • C:

            180 毫歐 @ 9A,10V Id 時的

          • Vgs(th)(最大):

            4V @ 250µA 閘電荷(Qg) @

          • Vgs:

            72nC @ 10V 輸入電容(Ciss) @

          • Vds:

            1560pF @ 25V 功率 -

          • 最大:

            40W

          • 安裝類型:

            通孔

          • 封裝/外殼:

            TO-220-3 整包

          • 供應(yīng)商設(shè)備封裝:

            TO-220FP

          • 包裝:

            管件

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          24+
          SOP-8
          103300
          詢價
          INFINEON
          25+
          SOP-8
          3000
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          Infineon
          22+
          NA
          2118
          加我QQ或微信咨詢更多詳細信息,
          詢價
          AO
          25+
          SOP8
          10000
          原裝現(xiàn)貨假一罰十
          詢價
          Infineon Technologies
          22+
          8SOIC
          9000
          原廠渠道,現(xiàn)貨配單
          詢價
          IR
          22+
          SOP-8
          8000
          原裝正品支持實單
          詢價
          Infineon Technologies
          24+
          原裝
          5000
          原裝正品,提供BOM配單服務(wù)
          詢價
          Infineon Technologies
          2022+
          8-SOIC(0.154
          38550
          詢價
          Infineon Technologies
          23+
          原裝
          8000
          只做原裝現(xiàn)貨
          詢價
          Infineon Technologies
          23+
          原裝
          7000
          詢價
          更多IRF7811APBF供應(yīng)商 更新時間2026-1-21 16:30:00
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