| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF7702 | Power MOSFET(Vdss=-12V) Description HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr 文件：138.75 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
IRF7702 | Ultra Low On-Resistance Description HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr 文件：144.31 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
IRF7702 | Power MOSFET(Vdss=-12V) | Infineon 英飛凌 | Infineon | |
HEXFETPower MOSFET Ultra Low On-Resistance 1.8V Rated Description HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr 文件：233.57 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr 文件：184.83 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Ultra Low On-Resistance Description HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr 文件：144.31 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Ultra Low On-Resistance Description HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr 文件：190.31 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (1.2mm) Available in Tape & Reel Lead-Free Halogen-Free 文件：243.43 Kbytes 頁數(shù)：9 Pages | IRF | IRF |
詳細(xì)參數(shù)
- 型號：
IRF7702
- 功能描述：
MOSFET P-CH 12V 8A 8-TSSOP
- RoHS：
否
- 類別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列：
HEXFET®
- 標(biāo)準(zhǔn)包裝：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金屬氧化物 FET
- 特點：
邏輯電平門
- 漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫歐 @ 9A，10V Id 時的
- Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
- Vgs：
72nC @ 10V 輸入電容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安裝類型：
通孔
- 封裝/外殼：
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝：
TO-220FP
- 包裝：
管件
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TSSOP-8 |
32500 |
普通 |
詢價 | ||
INFINEON |
25+ |
SSOP-8 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
IR |
23+ |
TSSOP-8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
25+ |
TSSOP8 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Infineon Technologies |
22+ |
8TSSOP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
23+ |
MSOP8 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
ir |
25+ |
500000 |
行業(yè)低價,代理渠道 |
詢價 | |||
IR |
26+ |
TO-262 |
86720 |
全新原裝正品價格最實惠 假一賠百 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價 |
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