Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：116.88 Kbytes 頁數(shù)：8 Pages

IRF

采用 Micro 8 封裝的 20V 單 N 溝道功率 MOSFET

IR MOSFET 系列產(chǎn)品采用成熟的硅工藝，為設(shè)計人員提供了豐富的器件組合，以支持各種應(yīng)用，例如直流電機、逆變器、SMPS、照明、負載開關(guān)以及電池供電應(yīng)用等。這些器件擁有各種表貼封裝裝和通孔封裝產(chǎn)品，都是行業(yè)標準封裝，便于設(shè)計。 ? 適用于寬 SOA 的平面單元結(jié)構(gòu)\n? 針對分銷合作伙伴的廣泛可用性進行了優(yōu)化\n? 產(chǎn)品符合 JEDEC 標準\n? 針對低于 <100kHz 開關(guān)應(yīng)用進行了硅優(yōu)化\n? 薄型封裝（小于 1.1 毫米）;

Infineon

英飛凌

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：214.35 Kbytes 頁數(shù)：8 Pages

IRF

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：119.4 Kbytes 頁數(shù)：8 Pages

IRF

ULTRA LOW ON RESISTANCE

文件：214.35 Kbytes 頁數(shù)：8 Pages

IRF

ULTRA LOW ON RESISTANCE

文件：214.35 Kbytes 頁數(shù)：8 Pages

IRF