| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF733 | N-Channel Power MOSFETs, 5.5A, 350 V/400V Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VQS Rated at ±20 V ? Silicon Gate for Fast Switching Sp 文件:177.13 Kbytes 頁數(shù):6 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
IRF733 | N-Channel Power MOSFETs, 5.5 A, 350 V/400 V Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VQS Rated at ±20 V ? Silicon Gate for Fast Switching Sp 文件:848.7 Kbytes 頁數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
IRF733 | isc N-Channel MOSFET Transistor 文件:65 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
IRF733 | Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC | NJS | NJS | |
HEXFET Power MOSFET Description These N-Channel HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati 文件:215.65 Kbytes 頁數(shù):9 Pages | IRF | IRF | ||
Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE Description The FETKY? family of Co-Pack HEXFET?MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFET?MOSFETs combined with low forward drop Schottky results in an extremely efficient d 文件:216.2 Kbytes 頁數(shù):12 Pages | IRF | IRF | ||
Dual FETKY Co-Packaged Dual MOSFET Plus Schottky Diode Description The FETKY? family of Co-Pack HEXFET?MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFET?MOSFETs combined with low forward drop Schottky results in an extremely efficient d 文件:242.35 Kbytes 頁數(shù):12 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th 文件:200.2 Kbytes 頁數(shù):12 Pages | IRF | IRF | ||
HEXFET Power MOSFET 文件:129.15 Kbytes 頁數(shù):9 Pages | IRF | IRF | ||
Ultra Low On-Resistance Dual N-Channel MOSFET 文件:220.51 Kbytes 頁數(shù):9 Pages | IRF | IRF |
技術(shù)參數(shù)
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
2000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±20V
- Maximum Drain Source Voltage:
30V
- Maximum Continuous Drain Current:
4.7A
- Material:
Si
- Configuration:
Single Dual Drain
- Channel Type:
P
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
har |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
FSC |
23+ |
TO-220 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
SIL |
23+ |
65480 |
詢價 | ||||
IR/FSC |
22+ |
TO-263 |
6000 |
十年配單,只做原裝 |
詢價 | ||
har |
2023+ |
原廠封裝 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
IR |
22+ |
TO-220 |
89194 |
詢價 | |||
IR |
23+ |
TO-220 |
188 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
FSC |
24+ |
TO-220 |
80000 |
只做自己庫存 全新原裝進(jìn)口正品假一賠百 可開13%增 |
詢價 | ||
IR(國際整流器) |
25+ |
封裝 |
500000 |
源自原廠成本,高價回收工廠呆滯 |
詢價 | ||
IR |
24+/25+ |
3000 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 |
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