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          首頁(yè) >IRF732>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRF7324TR

          絲?。?a target="_blank" title="Marking" href="/irf7324/marking.html">IRF7324;Package:SOP-8;Dual P-Channel MOSFET

          ● Trench Technology ● Ultra Low On-Resistance ● Low Profile (

          文件:365.27 Kbytes 頁(yè)數(shù):8 Pages

          UMW

          友臺(tái)半導(dǎo)體

          IRF7325

          HEXFET Power MOSFET

          Description New P-Channel HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

          文件:241.84 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRF7325PBF

          HEXFET Power MOSFET

          Description New P-Channel HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

          文件:126.82 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRF7328

          絲?。?a target="_blank" title="Marking" href="/irf7328/marking.html">IRF7328;Package:SOP-8;Dual P-Channel 30 V (D-S) MOSFET

          Trench Technology Ultra Low On-Resistance  Dual P-Channel MOSFET Available in Tape & Reel  Lead-Free Features

          文件:402.14 Kbytes 頁(yè)數(shù):8 Pages

          UMW

          友臺(tái)半導(dǎo)體

          IRF7328

          HEXFET Power MOSFET

          Description New trench HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer

          文件:108.61 Kbytes 頁(yè)數(shù):8 Pages

          IRF

          IRF7328

          Dual P-Channel 30 V (D-S) MOSFET

          Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel Lead-Free

          文件:351.79 Kbytes 頁(yè)數(shù):8 Pages

          EVVOSEMI

          翊歐

          IRF7328PBF

          HEXFET? Power MOSFET

          Description New trench HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

          文件:167.52 Kbytes 頁(yè)數(shù):8 Pages

          IRF

          IRF7328TR

          絲?。?a target="_blank" title="Marking" href="/irf7328/marking.html">IRF7328;Package:SOP-8;Dual P-Channel 30 V (D-S) MOSFET

          Trench Technology Ultra Low On-Resistance  Dual P-Channel MOSFET Available in Tape & Reel  Lead-Free Features

          文件:402.14 Kbytes 頁(yè)數(shù):8 Pages

          UMW

          友臺(tái)半導(dǎo)體

          IRF7328TR

          絲?。?a target="_blank" title="Marking" href="/irf7328/marking.html">IRF7328;Package:SOP-8;Dual P-Channel 30 V (D-S) MOSFET

          Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel Lead-Free

          文件:351.79 Kbytes 頁(yè)數(shù):8 Pages

          EVVOSEMI

          翊歐

          IRF7329

          HEXFET POWER MOSFET

          HEXFET Power MOSFET ? Trench Technology ? Ultra Low On-Resistance ? Dual P-Channel MOSFET ? Low Profile (

          文件:318.07 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          技術(shù)參數(shù)

          • Minimum Operating Temperature:

            -55°C

          • Maximum Power Dissipation:

            2000mW

          • Maximum Operating Temperature:

            150°C

          • Maximum Gate Source Voltage:

            ±20V

          • Maximum Drain Source Voltage:

            30V

          • Maximum Continuous Drain Current:

            4.7A

          • Material:

            Si

          • Configuration:

            Single Dual Drain

          • Channel Type:

            P

          • Channel Mode:

            Enhancement

          • Category:

            Power MOSFET

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          IR
          24+
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          絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
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          更多IRF732供應(yīng)商 更新時(shí)間2026-1-20 13:30:00
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