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          首頁 >IRF732>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF732

          N-Channel Power MOSFETs, 5.5A, 350 V/400V

          Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VQS Rated at ±20 V ? Silicon Gate for Fast Switching Sp

          文件:177.13 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF732

          N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

          Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VQS Rated at ±20 V ? Silicon Gate for Fast Switching Sp

          文件:848.7 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          IRF732

          isc N-Channel MOSFET Transistor

          文件:65 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF732

          Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC

          NJS

          NJS

          IRF7324

          絲印:IRF7324;Package:SOP-8;Dual P-Channel MOSFET

          ● Trench Technology ● Ultra Low On-Resistance ● Low Profile (

          文件:365.27 Kbytes 頁數(shù):8 Pages

          UMW

          友臺半導(dǎo)體

          IRF7324

          HEXFET? Power MOSFET

          Description New trench HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wit

          文件:104.75 Kbytes 頁數(shù):8 Pages

          IRF

          IRF7324D1

          FETKY MOSFET / Schottky Diode

          Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining

          文件:164.18 Kbytes 頁數(shù):8 Pages

          IRF

          IRF7324D1PBF

          FETKY??OSFET / Schottky Diode

          Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining

          文件:134.21 Kbytes 頁數(shù):8 Pages

          IRF

          IRF7324D1TR

          FETKY MOSFET / Schottky Diode

          Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining

          文件:164.18 Kbytes 頁數(shù):8 Pages

          IRF

          IRF7324PBF

          HEXFET Power MOSFET(-20V, 0.018ohm)

          Description New trench HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

          文件:164.45 Kbytes 頁數(shù):8 Pages

          IRF

          技術(shù)參數(shù)

          • Minimum Operating Temperature:

            -55°C

          • Maximum Power Dissipation:

            2000mW

          • Maximum Operating Temperature:

            150°C

          • Maximum Gate Source Voltage:

            ±20V

          • Maximum Drain Source Voltage:

            30V

          • Maximum Continuous Drain Current:

            4.7A

          • Material:

            Si

          • Configuration:

            Single Dual Drain

          • Channel Type:

            P

          • Channel Mode:

            Enhancement

          • Category:

            Power MOSFET

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          24+
          原廠封裝
          2000
          原裝現(xiàn)貨假一罰十
          詢價
          ST
          21
          全新原裝 貨期兩周
          詢價
          VB
          25+
          TO-220
          10000
          原裝現(xiàn)貨假一罰十
          詢價
          F
          22+
          TO-220
          6000
          十年配單,只做原裝
          詢價
          IR
          23+
          TO-220
          8000
          只做原裝現(xiàn)貨
          詢價
          IR
          23+
          TO-220
          7000
          詢價
          IOR
          23+
          SO-8
          7000
          絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
          詢價
          IR
          24+/25+
          1251
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          IR
          25+
          SOP-8
          3500
          福安甌為您提供真芯庫存,真誠服務(wù)
          詢價
          IR
          05/06+
          SOP8
          203
          全新原裝100真實(shí)現(xiàn)貨供應(yīng)
          詢價
          更多IRF732供應(yīng)商 更新時間2026-1-19 13:34:00
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