| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：IRF7316；Package：SOP-8；Dual P-Channel MOSFET Features ? Vbs(v)=-30V ? Roson) 文件：392.68 Kbytes 頁數(shù)：7 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7316/marking.html">IRF7316；Package：SOP-8；Dual P-Channel MOSFET Features Vs (v)=-30V Rpson) 文件：364.15 Kbytes 頁數(shù)：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
-30V PP-Channel Enhancement Mode MOSFET GENERAL FEATURES ● VDS = -30V b = -8 A ● ROS(ON) 文件：3.06247 Mbytes 頁數(shù)：5 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：156.86 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
N-Channel and P-Channel Enhancement Mode Power MOSFET Features ? N-Channel: 30V, 10A RDS(ON) 文件：1.11085 Mbytes 頁數(shù)：8 Pages | BYCHIP 百域芯 | BYCHIP | ||
Dual N P Channel MOSFET Features N-Ch: Vos (v)=30V Rosoy(on) 文件：402.24 Kbytes 頁數(shù)：10 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲?。?a target="_blank" title="Marking" href="/irf7319/marking.html">IRF7319；Package：SOP-8；Dual N P Channel MOSFET Features N-Ch: e Vos(v)=30V ? Rosony) 文件：430.91 Kbytes 頁數(shù)：10 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：137.16 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：224.22 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
絲印：IRF7319；Package：SOP-8；Dual N P Channel MOSFET Features N-Ch: Vos (v)=30V Rosoy(on) 文件：402.24 Kbytes 頁數(shù)：10 Pages | EVVOSEMI 翊歐 | EVVOSEMI |
技術(shù)參數(shù)
- Minimum Operating Temperature：
-55°C
- Maximum Power Dissipation：
2000mW
- Maximum Operating Temperature：
150°C
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
30V
- Maximum Continuous Drain Current：
4.7A
- Material：
Si
- Configuration：
Single Dual Drain
- Channel Type：
P
- Channel Mode：
Enhancement
- Category：
Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SMG |
05+ |
原廠原裝 |
53 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
哈里斯 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
哈里斯 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
哈里斯 |
25+ |
TO-220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR/FSC |
22+ |
D2-PAK |
6000 |
十年配單,只做原裝 |
詢價 | ||
IR |
23+ |
66504 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | |||
IR |
2023+ |
3000 |
進口原裝現(xiàn)貨 |
詢價 | |||
SEC |
25+ |
TO-220 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220 |
7000 |
詢價 | |||
IR/FSC |
25+ |
D2-PAK |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 |
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