| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces 文件：696.34 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：125.28 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：186.9 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
P-Ch 100V Fast Switching MOSFETs 100 EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology 文件：998.16 Kbytes 頁數(shù)：4 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
HEXFET Power MOSFET Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces 文件：696.34 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
絲印：F5210S；Package：TO-263；P-Channel Power MOSFET Application + DC/DC Converter Portable equipment and battery ? Power Switch 文件：2.64001 Mbytes 頁數(shù)：4 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.23 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPE 文件：181.76 Kbytes 頁數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Advanced Process Technology 文件：738.7 Kbytes 頁數(shù)：8 Pages | KERSEMI | KERSEMI | ||
P-Channel MOSFET Transistor 文件：334.13 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc P-Channel MOSFET Transistor 文件：272.32 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
技術(shù)參數(shù)
- Maximum Power Dissipation：
40000mW
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
60V
- Maximum Continuous Drain Current：
8A
- Configuration：
Single
- Channel Type：
N
- Channel Mode：
Enhancement
- Category：
Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
05+ |
原廠原裝 |
4493 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
25+ |
TO-220 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
HARRIS |
新 |
170 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價 | ||
HArris |
25+ |
2 |
公司優(yōu)勢庫存 熱賣中!! |
詢價 | |||
IR |
23+ |
TO-220 |
9077 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
1922+ |
TO-220 |
207 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
23+ |
TO-220 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220 |
7000 |
詢價 | |||
24+ |
N/A |
52000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 |
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