| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET VDSS = 100V RDS(on) = 23m? ID = 57A Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig 文件：185.06 Kbytes 頁(yè)數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) VDSS = 100V RDS(on) = 23m? ID = 57A Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig 文件：184.53 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
HEXFET? Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A ) VDSS = 100V RDS(on) = 23m? ID = 57A Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig 文件：279.47 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
Advanced Process Technology VDSS = 100V RDS(on) = 23m? ID = 57A Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig 文件：297.54 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
HEXFET? Power MOSFET VDSS = 100V RDS(on) = 23m? ID = 57A Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig 文件：297.54 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
絲印：EVVO-IRF3710-YYYY；Package：TO-220；N-Channel Enhancement Mode MOSFET Description The IRF3710Z uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =60A RDS(ON) 文件：1.13608 Mbytes 頁(yè)數(shù)：4 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp 文件：270.17 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology VDSS = 100V RDS(on) = 18m? ID = 59A Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved 文件：293.92 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp 文件：270.17 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr 文件：323.95 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF3710PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
23 m?
- ID @25°C max：
57 A
- QG typ @10V：
86.7 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220/TO-263 |
50000 |
勤思達(dá)科技主營(yíng)IR系列,全新原裝正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
IR |
25+ |
TO-252 |
20300 |
IR原裝特價(jià)IRF3710即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢價(jià) | ||
25+ |
500 |
公司現(xiàn)貨庫(kù)存 |
詢價(jià) | ||||
IR |
2016+ |
TO220 |
3574 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢價(jià) | ||
IR |
23+ |
TO-220 |
32078 |
10年以上分銷商,原裝進(jìn)口件,服務(wù)型企業(yè) |
詢價(jià) | ||
IR |
17+ |
TO-220AB |
31518 |
原裝正品 可含稅交易 |
詢價(jià) | ||
IR |
24+ |
TO 220 |
160908 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
25+ |
TO-220 |
6500 |
十七年專營(yíng)原裝現(xiàn)貨一手貨源,樣品免費(fèi)送 |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
模塊 |
6500 |
只要掛著就有貨原裝正品價(jià)格優(yōu)惠 |
詢價(jià) |
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