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          首頁 >IRF320>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF3205L

          Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

          VDSS= 55V RDS(on)= 8.0m? ID= 110A? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

          文件:160.74 Kbytes 頁數:10 Pages

          IRF

          IRF3205PBF

          HEXFET Power MOSFET

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:176.66 Kbytes 頁數:8 Pages

          IRF

          IRF3205PBF.

          Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

          Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

          文件:92.66 Kbytes 頁數:8 Pages

          IRF

          IRF3205S

          N-Ch 60V Fast Switching MOSFETs

          Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

          文件:505.03 Kbytes 頁數:4 Pages

          EVVOSEMI

          翊歐

          IRF3205S

          Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

          VDSS= 55V RDS(on)= 8.0m? ID= 110A? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

          文件:160.74 Kbytes 頁數:10 Pages

          IRF

          IRF3205SPBF

          HEXFET? Power MOSFET

          VDSS= 55V RDS(on)= 8.0m? ID= 110A Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE

          文件:277.34 Kbytes 頁數:10 Pages

          IRF

          IRF3205VPBF

          HEXFET Power MOSFET

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:939.9 Kbytes 頁數:8 Pages

          IRF

          IRF3205Z

          AUTOMOTIVE MOSFET

          Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

          文件:303.57 Kbytes 頁數:12 Pages

          IRF

          IRF3205ZL

          AUTOMOTIVE MOSFET

          Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

          文件:303.57 Kbytes 頁數:12 Pages

          IRF

          IRF3205ZLPBF

          AUTOMOTIVE MOSFET

          Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

          文件:370.99 Kbytes 頁數:13 Pages

          IRF

          技術參數

          • OPN:

            IRF3205PBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            55 V

          • RDS (on) @10V max:

            8 m?

          • ID @25°C max:

            110 A

          • QG typ @10V:

            97.3 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V

          • VGS(th) max:

            4 V

          • VGS(th):

            3 V

          • Technology:

            IR MOSFET?

          供應商型號品牌批號封裝庫存備注價格
          IR
          2015+
          TO-3(鐵帽)
          19889
          一級代理原裝現貨,特價熱賣!
          詢價
          IR
          05+
          原廠原裝
          5566
          只做全新原裝真實現貨供應
          詢價
          IR/MOT
          24+
          TO-3
          1500
          原裝現貨假一罰十
          詢價
          IR/MOT
          專業(yè)鐵帽
          TO-3
          1500
          原裝鐵帽專營,代理渠道量大可訂貨
          詢價
          IR/MOT
          專業(yè)鐵帽
          TO-3
          67500
          鐵帽原裝主營-可開原型號增稅票
          詢價
          IR
          90+91+92+
          TO
          340
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          IR
          22+
          TO-3
          6000
          終端可免費供樣,支持BOM配單
          詢價
          IR
          23+
          TO-3
          50336
          ##公司主營品牌長期供應100%原裝現貨可含稅提供技術
          詢價
          IR
          23+
          TO-3
          8000
          專注配單,只做原裝進口現貨
          詢價
          IR
          23+
          TO-3
          7000
          詢價
          更多IRF320供應商 更新時間2026-1-21 16:40:00
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