| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF320 | N-Channel Power MOSFETs, 3.0 A, 350-400 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. ? Low RDs(on) ? VGS 文件:164.92 Kbytes 頁數(shù):5 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
IRF320 | N-CHANNEL POWER MOSFETS
文件:213.53 Kbytes 頁數(shù):5 Pages | SAMSUNG 三星 | SAMSUNG | |
IRF320 | 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:67.83 Kbytes 頁數(shù):7 Pages | INTERSIL | INTERSIL | |
IRF320 | Static Drain-Source On-Resistance 文件:48.23 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
IRF320 | 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs 文件:137.47 Kbytes 頁數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體公司 | NJSEMI | |
IRF320 | N-Channel Power MOSFETs 文件:333.66 Kbytes 頁數(shù):6 Pages | ARTSCHIP | ARTSCHIP | |
IRF320 | N-CHANNEL POWER MOSFETS | ONSEMI 安森美半導體 | ONSEMI | |
N-Channel Power MOSFETs, 3.0 A, 350-400 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. ? Low RDs(on) ? VGS 文件:164.92 Kbytes 頁數(shù):5 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?? Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the 文件:92.66 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?? VDSS= 55V RDS(on)= 8.0m? ID= 110A? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design 文件:160.74 Kbytes 頁數(shù):10 Pages | IRF | IRF |
技術參數(shù)
- OPN:
IRF3205PBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
55 V
- RDS (on) @10V max:
8 m?
- ID @25°C max:
110 A
- QG typ @10V:
97.3 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET?
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2015+ |
TO-3(鐵帽) |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
05+ |
原廠原裝 |
5566 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
IR/MOT |
24+ |
TO-3 |
1500 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR/MOT |
專業(yè)鐵帽 |
TO-3 |
1500 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
IR/MOT |
專業(yè)鐵帽 |
TO-3 |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價 | ||
IR |
90+91+92+ |
TO |
340 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
22+ |
TO-3 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
TO-3 |
50336 |
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術 |
詢價 | ||
IR |
23+ |
TO-3 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-3 |
7000 |
詢價 |
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